sod-123 plastic-encapsulate diod e ze ner di ode fe a t ures ?e planar die con s truction ?e 5 00m w pow e r d i ssipati on on cera mic pcb ?e general purp ose medium curr ent ?e ideally sui t ed for automa ted assemb ly proce s ses high tempera t ur ?e e sol dering : 260 o c / 10 se cond s at te r m inals pb free produ ct a t av ailable : 99% s n abov e meet rohs ?e env ironment su bst a nce dire ctiv e reque st maximu m ra tin g s (t am b=25 j unless ot her w ise speci fied ) characterist i c s y m b o l v a l u e u n i t f o r w a rd vo ltag e @ if = 10 ma v f 0 . 9 v po w e r d i ss ipation (note 1) p d 5 0 0 m w thermal resis t ance, junction to a m bient a i r (note 1 ) r j a 3 0 5 j /w oper ati ng and sto r age tempe r atur e range tj, tstg - 5 5 to +150 j sod123 unit:inch(mm) min max min max a 1.050 1.250 0.041 0.049 a1 0.000 0.100 0.000 0.004 a2 1.050 1.150 0.041 0.045 b 0.450 0.650 0.018 0.026 c 0.080 0.150 0.003 0.006 d 1.500 1.700 0.059 0.067 e 2.600 2.800 0.102 0.110 e1 3.550 3.850 0.140 0.152 l l1 0.250 0.450 0.010 0.018 0 8 0 8 0.500 ref 0.020 ref symbol dimensions in millimeters dimensions in inches data sheet semiconductor http://www.yeashin.com 1 rev.02 20120403 bzt52c2v4-BZT52C51
bzt52c2v4-BZT52C51 type number marking code (note 3) zener voltage range (note 2) maximum zener impedance (note 4) maximum reverse current typical temperature coefficient @i ztc mv/ c test current i ztc v z @i zt i zt z zt @ i zt z zk @i zk i zk i r @ v r nom (v) min (v) max (v) ma ma ua v min max ma bzt52c2v4 wx 2.4 2.2 2.6 5 100 600 1.0 50 1.0 -3.5 0 5 bzt52c2v7 w1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 bzt52c3v0 w2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 bzt52c3v3 w3 3.3 3.1 3.5 5 95 600 1.0 5.0 1.0 -3.5 0 5 bzt52c3v6 w4 3.6 3.4 3.8 5 90 600 1.0 5.0 1.0 -3.5 0 5 bzt52c3v9 w5 3.9 3.7 4.1 5 90 600 1.0 3.0 1.0 -3.5 0 5 bzt52c4v3 w6 4.3 4.0 4.6 5 90 600 1.0 3.0 1.0 -3.5 0 5 bzt52c4v7 w7 4.7 4.4 5.0 5 80 500 1.0 3.0 2.0 -3.5 0.2 5 bzt52c5v1 w8 5.1 4.8 5.4 5 60 480 1.0 2.0 2.0 -2.7 1.2 5 bzt52c5v6 w9 5.6 5.2 6.0 5 40 400 1.0 1.0 2.0 -2 2.5 5 bzt52c6v2 wa 6.2 5.8 6.6 5 10 150 1.0 3.0 4.0 0.4 3.7 5 bzt52c6v8 wb 6.8 6.4 7.2 5 15 80 1.0 2.0 4.0 1.2 4.5 5 bzt52c7v5 wc 7.5 7.0 7.9 5 15 80 1.0 1.0 5.0 2.5 5.3 5 bzt52c8v2 wd 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 bzt52c9v1 we 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 bzt52c10 wf 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 bzt52c11 wg 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 bzt52c12 wh 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 bzt52c13 wi 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 bzt52c15 wj 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 bzt52c16 wk 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 bzt52c18 wl 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 bzt52c20 wm 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 bzt52c22 wn 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 bzt52c24 wo 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 bzt52c27 wp 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 bzt52c30 wq 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 bzt52c33 wr 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 bzt52c36 ws 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 bzt52c39 wt 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 bzt52c43 wu 43 40.0 46.0 2 100 700 1.0 0.1 32 10.0 12.0 5 bzt52c47 wv 47 44.0 50.0 2 100 750 1.0 0.1 35 10.0 12.0 5 BZT52C51 ww 51 48.0 54.0 2 100 750 1.0 0.1 38 10.0 12.0 5 electrical characteristics @ t a = 25 c unless otherwise specified notes: 1. device mounted on ceramic pcb; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm 2 . 2. tested with pulses, period = 5ms, pulse width = 300 s. 3. when provided, otherwise, parts are provided with date code only, and type number identifications appears on reel only. 4. f = 1khz. w 5. thermal resistance from junction to ambient and form junction to lead p.c.b mounted on 0.2x0.2" (5.0x5.0mm) copper pad areas r k j l= r k j c= 10 0 j / http://www.yeashin.com 2 rev.02 20120403
3 typical characteristics bzt52c2v4-BZT52C51 0 0.1 0.2 0.3 0.4 0.5 25 050 75 100 125 150 p,p o wer dissip ati o n (w) d t , ambient temperature ( c) fig. 1 power dissipation vs ambient temperature a 0.6 0 10 20 30 40 50 01 2 3 4 5 6 7 8910 i , zener c urrent ( ma ) z v , zener voltage (v) fig. 2 zener breakdown characteristics z t = 25c j c2v7 c3v3 c3v9 c4v7 c5v6 c6v8 c8v2 c6v2 test current i 5.0ma z 0 10 20 30 0 i , zener current (ma) z v , zener voltage (v) fi g . 3 zener breakdown characteristics z 10 20 30 40 t = 25c j test current i 5ma z test current i 2ma z c10 c12 c18 c22 c27 c33 c36 c15 0 2 4 6 8 10 10 20 30 40 50 60 70 80 90 100 i , zener current (ma) z v , zener voltage (v) fi g . 4 zener breakdown characteristics z test current i 2ma z c39 t = 25c j c , total cap acitance (pf) t 10 100 1000 10 100 1 v , nominal zener voltage (v) fig. 5 total capacitance vs nominal zener voltage z t = 25 c f = 1mhz j v=1v r v=2v r v=1v r v=2v r http://www.yeashin.com 3 rev.02 20120403
|
